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 IGBT High Speed
Short Circuit SOA Capability
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IXSH 50N60B
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= 600 V = 75 A = 2.5 V
Symbol VCES VCGR VGES VGEM IC25 IC90 ICM SSOA (RBSOA) tSC (SCSOA) PC TJ TJM Tstg Md Weight
Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGE = 1 M Continuous Transient TC = 25C, limited by leads TC = 90C TC = 25C, 1 ms VGE = 15 V, TVJ = 125C, RG = 22 Clamped inductive load, L = 30 H VGE = 15 V, VCE = 360 V, TJ = 125C RG = 22 , non repetitive TC = 25C
Maximum Ratings 600 600 20 30 75 50 200 ICM = 100 @ 0.8 VCES 10 250 -55 ... +150 150 -55 ... +150 V V V V A A A A
TO-247 AD
G
=Eq^_F C E
G = Gate, E = Emitter,
C = Collector, TAB = Collector
Features s W C C C International standard package JEDEC TO-247 AD, and TO-247 SMD for surface mount Guaranteed Short Circuit SOA capability High frequency IGBT Latest generation HDMOSTM process Low VCE(sat) - for minimum on-state conduction losses MOS Gate turn-on - drive simplicity Applications
Mounting torque
1.13/10 Nm/lb.in. TO-247 SMD TO-247 4 6 300 g g C
Maximum lead temperature for soldering 1.6 mm (0.062 in.) from case for 10 s
Symbol
Test Conditions
Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 600 4 TJ = 25C TJ = 125C 8 200 1 100 2.2 2.5 V V A mA nA V
BVCES VGE(th) ICES IGES VCE(sat)
IC IC
= 250 A, VGE = 0 V = 4 mA, VCE = VGE
AC motor speed control DC servo and robot drives DC choppers Uninterruptible power supplies (UPS) Switch-mode and resonant-mode power supplies Advantages Easy to mount with 1 screw (isolated mounting screw hole) Reduces assembly time and cost High power density
VCE = 0.8 * VCES VGE = 0 V VCE = 0 V, VGE = 20 V IC = IC90; VGE = 15 V
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IXSH 50N60B
Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 16 23 S
m
TO-247 AD Outline
gfs IC(on) Cies Coes Cres Qg Qge Qgc td(on) tri td(off) tfi Eoff td(on) tri Eon td(off) tfi Eoff RthJC RthCK
IC = IC90; VCE = 10 V, Pulse test, t 300 s, duty cycle 2 % VGE = 15 V, VCE = 10 V
160 3850
A pF pF pF nC nC nC ns ns 300 300 ns ns
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VCE = 25 V, VGE = 0 V, f = 1 MHz
440 50 167
IC = IC90, VGE = 15 V, VCE = 0.5 VCES Inductive load, TJ = 25C IC = IC90, VGE = 15 V, L = 100 H, VCE = 0.8 VCES, RG = 2.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG Inductive load, TJ = 125C IC = IC90, VGE = 15 V, L = 100 H VCE = 0.8 VCES, RG = 2.7 Remarks: Switching times may increase for VCE (Clamp) > 0.8 * VCES, higher TJ or increased RG
45 88 70 70 150 150 3.3 70 70 0.6 230 230 4.8
6.0 mJ ns ns mJ ns ns mJ 0.5 K/W
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faAUEe jaaK j~nK KNUR KOMV KMUT KNMO KMRV KMVU KMQM KMRR KMSR KMUQ KNNP KNOP KMNS KMPN KUNV KUQR KSNM KSQM MKOMR MKOOR KTUM KUMM KNTT KNQM KNQQ MKOPO MKORO KNTM KONS OQO _p
0.25
K/W
IXYS reserves the right to change limits, test conditions, and dimensions.
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IXSH 50N60B
160
TJ = 25C VGE = 15V 13V TJ = 25C
100 80
VGE = 15V
120
IC - Amperes
IC - Amperes
60 40 20
9V 11V
13V
80
11V
40
9V
0 0 2 4 6 8
7V
0
10
0
4
8
12
16
20
VCE - Volts
VCE - Volts
Figure 1. Saturation Voltage Characteristics
100
TJ = 125C
Figure 2. Extended Output Characteristics
1.6
VGE = 15V
13V
IC = 100A
VCE (sat) - Normalized
80
1.4
VGE = 15V
IC - Amperes
1.2 1.0 0.8
IC = 25A
60
11V
40 20 0 0 2 4 6 8 10
9V 7V
IC = 50A
0.6 0.4 25
50
75
100
125
150
VCE - Volts
TJ - Degrees C
Figure 3. Saturation Voltage Characteristics
Figure 4. Temperature Dependence of VCE(sat)
10000
100
VCE = 10V
f = 1Mhz Ciss
80
Capacitance - pF
IC - Amperes
1000
60 40
TJ = 125C
100
Coss
20
T J = 25C
Crss
0 4 6 8 10
VGE - Volts
10
12
14
16
0
5
10
15
20
25
30
35
40
VCE-Volts
Figure 5. Admittance Curves
Figure 6. Capacitance Curves
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IXSH 50N60B
3.0
TJ = 125C
E(ON)
24
RG = 10
4
TJ = 125C E(OFF)
20
2.5
E(ON) - millijoules
20
E(OFF) - milliJoules
E(ON) - millijoules
3
E(ON)
2.0 1.5 1.0 0.5 0.0
0 20 40 60 80
E(OFF)
16 12 8 4 0 100
IC = 100A
15
E(OFF) - millijoules
2
E(ON) E(ON) IC = 50A
E(OFF)
10
1
E(OFF) IC =25A
5
0
0
10
20
30
40
50
0 60
IC - Amperes
RG - Ohms
Figure 7. Dependence of EON and EOFF on IC.
Figure 8. Dependence of EON and EOFF on RG.
600
20
IC =50A
16 12 8 4 0 0
VCE = 250V
100
IC - Amperes
10
TJ = 125C
RG = 6.2 dV/dt < 5V/ns
1
0.1 25 50 75 100 125 150 175 0 100 200 300 400 500 600
Qg - nanocoulombs
VCE - Volts
Figure 9. Gate Charge
1
Figure 10. Turn-off Safe Operating Area
ZthJC (K/W)
0.1
D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse
0.01
D = Duty Cycle
0.001 0.00001
0.0001
0.001
0.01
0.1
1
Pulse Width - Seconds
Figure 11. Transient Thermal Resistance
IXYS reserves the right to change limits, test conditions, and dimensions.
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